Amplifiers

These amplifier designs are by Motorola and FreeScale.
  1. AN779L

    The AN779L driver amplifier provides a power output of 20 watts with a maximum power gain of 25 dB and the construction technique allows the use of inexpensive components throughout. The plastic RF power transistors, MRF475 and MRF476, featured in this amplifier, were initially developed for the CB market. This amplifier was designed to serve as a 1.6 to 30 MHz broadband driver.   5 to 6 Week Lead Time

  2. AN779H

    The AN779H driver amplifier provides a power output of 20 watts SSB with a maximum power gain of 18 dB and the construction technique allows the use of inexpensive components throughout.  This amplifier was designed to serve as a 1.6 to 30 MHz SSB broadband driver. The high gain module is not available.

  3. AN762

    The AN762 amplifier is designed for mobile operations.  The amplifier operates over the 1.6 to 30 MHz frequency range with a 13.6VDC power supply.

  4. EB63A

    The EB63 amplifier has an output of 140 watts (PEP) over a frequency range of 2-30MHz.  The amplifier uses two MRF454 transistors which are specified at 80 watts power output with 5 watts of input drive. The amplifier will accept Single Side Band (SSB) or Amplititude Modulation (AM) without external switching.  A carrier operated relaly circuit (COR) is on the same layout to make this an easy amplifier to add to any suitable radio with an RF output of 1-5 watts.

  5. EB27A

    The EB27A HF amplifier is a push-pull linear amplifier for 300 watts of PEP or CW output power across the 2 to 30 MHZ band. One of Motorola's new high-power transistors developed for single-sideband, the MRF-422, is used in this amplifier design. The EB27A operates from a 28 Vdc power supply.

  6. AN758

    The AN758 HF amplifier is a push-pull linear amplifier designed for 300 watts of PEP or CW output power across the 2 to 30 MHz frequency band.  The high power MRF429 RF transistors are used in this amplifier design.  The AN758 operates from a 50 Vdc power supply.

  7. AR313

    This amplifier design covers frequencies from HF to VHF with a power output level of 300 watts using RF power MOSFETs. The MRF141G is housed in a special push-pull header commonly known as "Gemini" (twins) meaning that there are two identical transistors mounted next to each other on a common carrier or flange. The frequency range of this amplifier design is 10-150 MHz. This amplifier was originally designed for operation from a 12 to 28 volt power supply.

  8. AR305

    This amplifier design covers frequencies from HF to VHF with a power output level of 300 watts using RF power MOSFETs. The MRF151G is housed in a special push-pull header commonly known as "Gemini" (twins) meaning that there are two identical transistors mounted next to each other on a common carrier or flange. This amplifier was originally designed for operation from a constant 40 to 50 volt power supply.

  9. EB104

    The EB104 HF amplifier is a push-pull/parallel linear amplifier designed for 600 watts of PEP or CW output power across the 2 to 30 MHz frequency band using four RF devices without the added loss and cost of power splitters and combiners.  The Motorola MRF150 RF power FET makes it possible to parallel two or more devices at relatively high power levels.  This amplifier can be operated from supply voltages of 40 to 50 volts DC depending on linerarity requirements.  The bias for each device is independently adjustable, therefore no matching is required for the gate threshold voltages.

  10. AR347

    This amplifier design covers frequencies from 2 to 50 Mhz with a power output level of 1000 watts using RF power MOSFETs. Its applications include military communications, jammers, low channel TV, etc. Although the point of saturation is well over 1000 watts, the amplifier was tested for linearity at 800 watts.

  11. 2M-1KW

    This amplifier design is a rugged linear amplifier for the 2 meter amateur band (144 MHz - 148 MHz) operation. Because of the ruggedness and low thermal resistance of the MRFE6VP61K25H transistor used in the design, the amplifier can output high power even when operating into high VSWR.  The amplifier can be biased for Class AB linear or Class C operation and is suitable for both analog and digital waveforms (AM/SSB or WSJT/FM/CW).

  12. FM-1KW

    This amplifier design is a rugged linear amplifier for the FM broadcast (88 MHz - 108 MHz) operation. Because of the ruggedness and low thermal resistance of the MRFE6VP61K25H transistor used in the design, the amplifier can output high power even when operating into high VSWR.  The amplifier focuses on FM broadcast radio applications for both analog and complex modulation waveforms.